The AT29C512 is a 5-volt only in-system Flash programmable and erasable read only memory (PEROM). Its 512K of memory is organized as 65,536 words by 8 bits. Manufactured with Atmel’s advanced nonvolatile CMOS technology, the device offers access times to 70 ns with power dissipation of just 275 mW over the commercial temperature range. When the device is deed, the CMOS standby current is less than 100 μA. The device endurance is such that any sector can typically be written to in excess of 10,000 times.

To allow for simple in-system reprogrammability, the AT29C512 does not require high input voltages for programming. Five-volt-only commands determine the operation of the device. Reading data out of the device is similar to reading from an EPROM. Reprogramming the AT29C512 is performed on a sector basis; 128 bytes of data are loaded into the device and then simultaneously programmed.

During a reprogram cycle, the address locations and 128 bytes of data are internally latched, freeing the address and data bus for other operations. Following the initiation of a program cycle, the device will automatically erase the sector and then program the latched data using an internal control timer. The end of a program cycle can be detected by DATA polling of I/O7. Once the end of a program cycle has been detected, a new access for a read or program can start.

AT29C512仅仅是一5伏特在里面系统闪光可编程并且可删除仅仅读记忆(PEROM)。它的存储器的512K被8位作为65,536个词组织。与Atmel 的先进的永久 CMOS技术生产了,提议与就275 mW的力量驱散在广告上存取70 ns的时间的设备温度范围。当设备被取消选择时,CMOS 待机水流是不到100μ一。设备耐力是如此的那任何扇形能典型地被写给在10,000次的过量。

允许简单的在里面系统reprogrammability,AT29C512不为编程要求高输入电压。Five-volt-only命令决定设备的操作。从设备读数据对从一EPROM的朗诵类似。AT29C512在一个扇形基础上被施行的 Reprogramming;数据的128个字节被装载进设备并且然后同时规划了。

在一reprogram期间周期，数据的地址地点和128个字节内部被拴住, 释放地址和数据为另外的操作的总线。跟随一个程序周期的开始,设备将自动地擦掉扇形并且然后节目使用一个内部的控制定时器的拴住的数据。一个程序周期的结束能被I/O的数据检测。一旦一个程序周期的结束被检测了,新存取为一读或节目能开始。