The Am29F010 is a 1 Mbit, 5.0 Volt-only Flash memory organized as 131,072 bytes. The Am29F010 is offered in 32-pin PLCC, TSOP, and PDIP packages. The bytewide data appears on DQ0-DQ7. The device is designed to be programmed in-system with the standard system 5.0 Volt VCC supply. A 12.0 volt VPP is not required for program or erase operations. The device can also be programmed or erased in standard EPROM programmers.

The standard device offers access times of 45, 55, 70, 90, and 120 ns, allowing high-speed microprocessors to operate without wait states. To eliminate bus contention the device has separate chip enable (CE#), write enable (WE#) and output enable (OE) controls.

The device requires only a single 5.0 volt power supply for both read and write functions. Internally generated and regulated voltages are provided for the program and erase operations.

The system can place the device into the standby mode. Power consumption is greatly reduced in this mode.

AMD’s Flash technology combines years of Flash memory manufacturing experience to produce the highest levels of quality, reliabil i ty, and cost effectiveness. The device electrically erases all bits within a sector simultaneously via Fowler-Nordheim tunneling. The bytes are programmed one byte at a time using the EPROM programming mechanism of hot electron injection.

    Am29F010是一种1 Mbit,5.0伏特仅闪速存储器作为131,072个字节组织。Am29F010在32针PLCC，TSOP，并且PDIP被提供包裹。bytewide数据在DQ0-DQ7上出现。设备被设计被规划有标准的系统的在里面系统5.0伏特VCC供应。12.0伏特VPP没为节目被要求或擦掉操作。设备能也在标准的EPROM程序员被规划或擦掉。

    提议存取的标准的设备45，55，70，90，并且预定120ns,允许高速度微处理器操作没有等待状态。为了消除总线竞争，设备有分开的芯片设定(CE),写设定(我们)并且输出设定(OE)控制。

    设备仅仅要求为两个的供应读并且写功能的单个5.0伏特力量。内部产生了并且调整了电压为程序被提供并且擦掉操作。

    系统能把设备放进待机模式。力量消费极大地在这个模式被减少。

   AMD的闪光技术联合生产经验生产质量的高水平的闪速存储器的年,reliabil我ty，并且花费的有效性。设备电子上擦掉在扇形以内的所有的位同时经由Fowler-Nordheim通道。字节被规划一个字节一次使用EPROM热电子注射的编程机制。